The 66th JSAP Spring Meeting, 2019

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[12a-W541-1~12] 15.4 III-V-group nitride crystals

Tue. Mar 12, 2019 9:00 AM - 12:15 PM W541 (W541)

Narihito Okada(Yamaguchi Univ.), Hajime Fujikura(SCIOCS)

10:45 AM - 11:00 AM

[12a-W541-7] High-rate growth of a thick freestanding GaN wafer with CH4 by OVPE

〇(B)Masahiro Kamiyama1, Yoshikazu Gunji1, Haruya Kobayashi1, Takahiro Oshiba1, Akira Kitamoto1, Masayuki Imanishi1, Masashi Yoshimura1, Masashi Isemura2, Tomoaki Sumi3, Junichi Takino1,3, Yoshio Okayama3, Masaki Nobuoka3, Yusuke Mori1 (1.Osaka Univ., 2.Itochu Plastics Inc., 3.Panasonic Corporation)

Keywords:OVPE, CH4, GaN