[12a-W631-1~13] CS.3 Code-sharing Session of 3.11 & 13.6

[12a-W631-3] All-optical switching using a nanowire integrated into photonic crystal

〇Masato Takiguchi^1,2, Atsushi Yokoo^1,2, Kouta Tateno^1,2, Kengo Nozaki^1,2, Satoshi Sasaki², Sylvain Sergent^1,2, Eiichi Kuramochi^1,2, Guoqiang Zhang^1,2, Akihiko Shinya^1,2, Masaya Notomi^1,2 (1.NTT NPC, 2.NTT BRL)

Keywords:photonic crystal, nanowaire, All-optical switching

Fast signal modulation using nano-device is important for optical data communication in future photonic chips. Until now, we demonstrated fast signal modulation using telecom-band nanowire lasers [1] and single nanowire LEDs [2]. In this study, we investigate all-optical switching using a nanowire integrated in silicon photonic crystal. Because the nanowires are very thin (~100 nm), the non-radiative surface recombination becomes very fast at room temperature. Therefore our optical switch using such a thin nanowire can be operate fast. The Q factor of our nanowire induced photonic crystal cavity is over 25000 at 1.3 um region. The obtained switching speed is 150 ps. This work was supported by JSPS KAKENHI Grant Number 15H05735.
[1] M. Takiguchi, et.al., APL Photonics, 2, 046106 (2017)
[2] M. Takiguchi, et.al., Appl. Phys. Lett., 112, 251106 (2018)