[12p-M101-1~14] 10.4 Semiconductor spintronics, superconductor, multiferroics

[12p-M101-6] Estimation of Fermi surface position and magnetic properties by PL measurement of Diluted Magnetic Semiconductor GaGdAs:Si/GaAs superlattice.

〇Makoto Takafuji¹, Sho Kato¹, Akihiro Funabiki¹, Hajime Yoshida¹, Hayato Miyagawa¹, Yuji Hazama², Hidefumi Akiyama² (1.Kagawa Univ., 2.ISSP.)

Keywords:semiconductor, magnetic semiconductor

We fabricated diluted magnetic semiconductor superlattice GaGdAs:Si/GaAs by means of MBE(Molecular Beam Epitaxy) technique. PL measurements show that fermi energy increases with increasing n-type carrier by Si doping. The Gd concentration dependency on magnetization suggests that ferromagnetic coupling is induced by bound magnetic polaron in a specimen grown with Gd cell temperature of 1400 degree C.