The 66th JSAP Spring Meeting, 2019

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15 Crystal Engineering » 15.7 Crystal characterization, impurities and crystal defects

[12p-M111-1~13] 15.7 Crystal characterization, impurities and crystal defects

Tue. Mar 12, 2019 1:30 PM - 5:00 PM M111 (H111)

Toshiaki Ono(SUMCO), Hiroaki Kariyazaki(GWJ)

4:00 PM - 4:15 PM

[12p-M111-10] High sensitivity infrared absorption spectroscopy and infrared defect dynamics of silicon crystal(14) NO pairs, behavior and measurement

〇Naohisa Inoue1,2, Shuichii Kawamata2, Shuichi Okuda2 (1.Tokyo Univ. Agri. & Technol., 2.Osaka Pref. Univ.)

Keywords:silicon crystal, nitrogen-oxygen complex, infrared absorption

Local vibration modes from NO pairs in CZ silicon were detected and identified. Previously 973 and 1002 cm-1 peaks have been assigned to O(NO)O and 855 and 1064 cm-1 peaks to O(NO). 736 cm-1 peak was confirmed to be stable to higher temperatures and assigned to (NO)O. 736 cm-1 peak was left after removing the 766 cm-1 spectrum created from FZ spectrum and assigned to NO. Most possible absorption from NO pairs is used to measure the N concentration in NO pairs in CZ silicon.