[12p-M111-1~13] 15.7 Crystal characterization, impurities and crystal defects

[12p-M111-11] Measurement of carbon concentration in silicon crystal
(XVIII) Calibration between infrared absorption and SIMS

〇Naohisa Inoue^1,2, Shuichi Kawamata², Shuichi Okuda² (1.Tokyo Univ. Agri. & Technol., 2.Osaka Pref. Univ.)

Keywords:silicon crystal, carbon concentration measurement, infrared absorption

Infrared absorption (IR) measurement of carbon concentration in silicon crystal has been developed by the second generation IR recently. Calibration between IR and SIMS was done using the poly-FZ block gauge set. The slope agreed with the conventional conversion coefficient of 0.82x10¹⁷ atoms/cm², whereas the tangent was equal to the Cs concentration in the electron irradiated reference. By using the block gauge whose concentration is determined by SIMS, accurate concentration, equal to that obtained by the others, can be obtained.