[12p-M111-1~13] 15.7 Crystal characterization, impurities and crystal defects

[12p-M111-5] Investigation for oxygen precipitation model in ultra-high temperature RTP wafers (3)

〇Susumu Maeda¹, Kozo Nakamura², Haruo Sudo¹, Koji Sueoka³ (1.Technology, GlobalWafers Japan Co., Ltd., 2.Regional Cooperative Research Org., Okayama Prefectural Univ., 3.Faculty of Computer Science and Systems Eng., Okayama Prefectural Univ.)

Keywords:Silicon, Rapid Thermal Process, Oxygen precipitation