[12p-M111-1~13] 15.7 Crystal characterization, impurities and crystal defects

[12p-M111-6] Control of oxygen precipitation in Si wafers by ultra-high temperature RTP

〇Haruo Sudo^1,2, Susumu Maeda¹, Kozo Nakamura³, Koji Sueoka⁴ (1.GlobalWafers Japan, 2.Graduate School of Computer Science and Systems Eng., Okayama Pref. Univ., 3.Regional Cooperative Research Org., Okayama Pref. Univ., 4.Faculty of Computer Science and Systems Eng., Okayama Pref. Univ.)

Keywords:Silicon, Rapid Thermal Process, Oxygen precipitation

Siウェーハ中の酸素析出について、酸化性雰囲気でのRTPの冷却条件と酸素析出挙動との関係を調べ、酸素析出を適正な状態とする効果的な制御方法について報告する。