[12p-M111-1~13] 15.7 Crystal characterization, impurities and crystal defects

[12p-M111-7] Analysis of Oxygen Precipitates by Highly-Parallel-X-ray Diffuse Scattering

〇Tomoyuki Horikawa¹, Hiroyuki Fujimori¹, Yoshiyuki Tsusaka², Junji Matsui³ (1.GlobalWafers Japan Co., Ltd., 2.Grad. Sch. of Material Sci. Univ. of Hyogo, 3.Syn. Rad. Nano-Tech. Center)

Keywords:Si wafer, X-ray diffuse scattering, Oxygen precipitates