Relationship between impurity concentration and optical loss in Al<sub>0.5</sub>Ga<sub>0.5</sub>N guide layer of deep ultraviolet laser

Shunya Tanaka; Yuta Kawase; Kosuke Sato; Motoaki Iwaya; Tetsuya Takeuchi; Satoshi Kamiyama; Isamu Akasaki

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Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[12p-W541-1~12] 15.4 III-V-group nitride crystals

Tue. Mar 12, 2019 1:30 PM - 5:00 PM W541 (W541)

Kazunobu Kojima(Tohoku Univ.), Mitsuru Funato(Kyoto Univ.)

4:00 PM - 4:15 PM

△ [12p-W541-9] Relationship between impurity concentration and optical loss in Al_0.5Ga_0.5N guide layer of deep ultraviolet laser

〇(B)Shunya Tanaka¹, Yuta Kawase¹, Kosuke Sato^1,3, Motoaki Iwaya¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Isamu Akasaki^1,2 (1.Fac.Sci & Tec., Meijo Univ., 2.Akasaki Research Center, Nagoya Univ., 3.Asahi-Kasei)

Keywords:deep ultraviolet laser, AlGaN

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Presentation information

[12p-W541-1~12] 15.4 III-V-group nitride crystals

△ [12p-W541-9] Relationship between impurity concentration and optical loss in Al0.5Ga0.5N guide layer of deep ultraviolet laser

△ [12p-W541-9] Relationship between impurity concentration and optical loss in Al_0.5Ga_0.5N guide layer of deep ultraviolet laser