The 66th JSAP Spring Meeting, 2019

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13 Semiconductors » 13.7 Compound and power electron devices and process technology

[9a-M121-1~11] 13.7 Compound and power electron devices and process technology

Sat. Mar 9, 2019 9:30 AM - 12:30 PM M121 (H121)

Taketomo Sato(Hokkaido Univ.)

10:00 AM - 10:15 AM

[9a-M121-3] Effects of GaN Surface on Fixed Charge in SiO2/GaN Interface

〇Mutsunori Uenuma1, Ryota Ando1, Masaaki Furukawa1, Yasuaki Ishikawa1, Yukiharu Uraoka1 (1.NAIST)

Keywords:GaN, MOS Interface