The 66th JSAP Spring Meeting, 2019

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13 Semiconductors » 13.7 Compound and power electron devices and process technology

[9a-M121-1~11] 13.7 Compound and power electron devices and process technology

Sat. Mar 9, 2019 9:30 AM - 12:30 PM M121 (H121)

Taketomo Sato(Hokkaido Univ.)

10:30 AM - 10:45 AM

[9a-M121-5] Electron mobility in a channel formed at an Al2O3/GaN interface

〇Noriyuki Taoka1, Trung Nguyen Huu1, Hisashi Yamada1, Tokio Takahashi1, Mitsuaki Shimizu1,2 (1.AIST-NU GaN-OIL, 2.IMaSS)

Keywords:GaN, mobility, interface