[9a-PA1-1~13] 9.4 Thermoelectric conversion

[9a-PA1-2] Evaluation of Seebeck coefficient of Si wire by KFM

〇Yuhei Suzuki¹, Akito Oka¹, Taketo Kawai¹, Yuya Himeda², Hiroki Takezawa², Motohiro Tomita², Hirokazu Tatsuoka¹, Takashi Matsukawa³, Takeo Matsuki^2,3, Takanobu Watanabe², Hiroshi Inokawa¹, Masaru Shimomura¹, Kenji Murakami¹, Faiz Salleh⁴, Hiroya Ikeda¹ (1.Shizuoka Univ., 2.Waseda Univ., 3.AIST, 4.Univ. of Malaya)

Keywords:Kelvin-probe force microscopy, Seebeck coefficient, Si

In order to actually measure the Seebeck coefficient with using a kelvin-probe force microscopy, a Si wire equipped with a pad for temperature measurement was prepared, and surface potential was measured. The potential difference of 15 mV was obtained between the both ends of wire originated from the temperature gradient. The temperature difference between the pads was estimated to be 6 K. As a result, Seebeck coefficient was evaluated as -2.5 mV/K. This value was about 10 times larger than that of bulk Si with the same carrier concentration. This cause is under consideration with an analysis of electron distribution simulation.