[9a-PA2-1~40] 12.3 Functional Materials and Novel Devices

[9a-PA2-33] Revisiting transport mechanism in semiconducting carbon nanotube thin films with the aid of far-infrared plasmon response

Kanae Oi¹, Tsuyoshi Kawai¹, 〇Yoshiyuki Nonoguchi^1,2 (1.Nara Inst. Sci. Tech., 2.JST PRESTO)

Keywords:carbon nanotubes, tunneling, plasmon resonance

Single-walled carbon nanotubes (SWNTs) are known to exhibit unique ballistic carrier transport, while transport in their assembled films can be understood in terms of tube-to-tube tunneling.^[1] In this context, the methods of the Fermi level characterization are required in order to understand the relationship between tunneling and doping level. The field effect application has mostly been used to tune and estimate the Fermi level. Here we use one-dimensional plasmon resonance in the far-infrared (FIR) region for the estimation of carrier concentration.^[2] Using this technique, this study demonstrates relationship between doping level and electrical conductivity.