Operando Analysis of Local Piezoelectric Lattice Distortion in a Nitride Semiconductor HEMT Device Using Synchrotron Radiation Nanobeam X-ray Diffraction

Akira Ueda; Tetsuya Tohei; Yuji Ando; Tamotsu Hashidume; Yasuhiko Imai; Kazushi Sumitani; Shigeru Kimura; Akira Sakai

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[9a-W541-1~12] 15.4 III-V-group nitride crystals

Sat. Mar 9, 2019 9:00 AM - 12:15 PM W541 (W541)

Toru Akiyama(Mie Univ.), Tomoyuki Tanikawa(Tohoku Univ.)

11:15 AM - 11:30 AM

△ [9a-W541-9] Operando Analysis of Local Piezoelectric Lattice Distortion in a Nitride Semiconductor HEMT Device Using Synchrotron Radiation Nanobeam X-ray Diffraction

〇Akira Ueda¹, Tetsuya Tohei¹, Yuji Ando², Tamotsu Hashidume², Yasuhiko Imai³, Kazushi Sumitani³, Shigeru Kimura³, Akira Sakai¹ (1.Grad. Sch. of Eng. Sci., Osaka Univ., 2.RCIQE, Hokkaido Univ., 3.JASRI)

Keywords:Nanobeam X-ray diffraction, Piezo-response, Nitride semiconductor