[9a-W611-1~8] 16.3 Bulk, thin-film and other silicon-based solar cells

▲ [9a-W611-7] PEDOT:PSS/n-Si heterojunction solar cells with ALD-Al₂O₃ /n-Si field effect inversion layer

〇Md Enamul Karim¹, Tomofumi Ukai², Daisuke Harada¹, A.T.M. Saiful Islam¹, Shunji Kurosu², Yoshikata Nakajima², Yasuhiko Fujii², Masahide Tokuda², Tatsuro Hanajiri², Ryo Ishikawa¹, Keiji Ueno¹, Hajime Shirai¹ (1.Saitama University, 2.Toyo University)

Keywords:ALD

So far, we have studied the termination of Si nanopillars by ALD-Al₂O₃ and the effect on the performance of PEDOT:PSS/n-Si solar cells. Since PEDOT:PSS is a transparent hole-conducting layer with better Si passivation ability, the PEDOT:PSS/n-Si junction acts as a solar cell with no use of additional step. However, for further strengthen the electric field and improve the chemical stability of the interface, the minimize of the contact area between Si and PEDOT:PSS is a possible candidate using a high-dielectric such as Al₂O₃. In this study, we present the effect of inversion layer of ALD-Al₂O₃/n-Si on the photovoltaic performance of PEDOT:PSS/n-Si heterojunction solar cells.