[9a-W611-1~8] 16.3 Bulk, thin-film and other silicon-based solar cells

[9a-W611-8] Evaluation of field-effect of SiN/AlO/Si passivation using LTEM

〇Toshimitsu Mochizuki¹, Akira Ito², Katsuto Tanahashi¹, Hidetoshi Nakanishi², Iwao Kawayama³, Masayoshi Tonouchi³, Katsuhiko Shirasawa¹, Hidetaka Takato¹ (1.AIST, 2.SCREEN, 3.ILE, Osaka Univ.)

Keywords:Crystalline Silicon solar cells, Terahertz, PERC Cells

Field-effect passivation of SiN/AlO films on p-type Si was evaluated using a laser-terahertz emission microscope (LTEM). While the space-charge layer of the Si continuously transformed from depletion to accumulation with increasing AlO thickness, SiN thickness did not show systematic effect on the space-charge layer. This results show that AlO has negative charge in its bulk and SiN has positive charge on its interface with AlO.