[9p-PA4-1~30] 6.3 Oxide electronics

[9p-PA4-10] Fabrication of La_0.1Sr_1.9IrO_4-xF_y thin films by topotactic fluorination

〇Takahiro Maruyama¹, Akira Chikamatsu¹, Tsukasa Katayama¹, Kenta Kuramochi^2,3, Hiraku Ogino², Miho Kitamura⁴, Koji Horiba⁴, Hiroshi Kumigashira^4,5, Tetsuya Hasegawa¹ (1.Univ. of, 2.AIST, 3.Tokyo Univ. of Science, 4.KEK, 5.Tohoku Univ.)

Keywords:Iridium oxides, oxyfluoride, topotactic reaction

Sr₂IrO₄ is a unique Mott insulator due to the cooperation of spin orbit interaction and crystal fields. Until now, we tried topotactic fluorine doping on Sr₂IrO₄ epitaxial thin films and successfully fabricated a new oxyfluoride, Sr₂IrO_4-xF_y thin films. At this time, the resistivity did not change significantly before and after fluorination. Therefore, we investigated the change of the electron transport property by fluorinating the thin film with La doped Sr₂IrO₄ thin films with the low resistivity in advance, and it was found that the value of the resistivity was greatly increased by fluorination.