[9p-PA4-1~30] 6.3 Oxide electronics

[9p-PA4-11] Resistive nonvolatile memory formed with Cu and NiSi

〇Koki Nakayama¹, Takahiro Tsukamoto², Akihiro Saiga³, Itaru kato³, Toshiyuki Sameshima¹, Yoshiyuki Suda¹ (1.Graduate School of Eng., Tokyo Univ. of Agric. & Technol., 2.Univ. Electro-Comm., 3.NIT, Tokyo College)

Keywords:resistive random access memory

In the previous study, we succeeded in acquiring a high on / off current ratio in a memory device of Au/CuOx/CuxNiyOz/Ni/n-Si structure using two kinds of materials with different oxidizing powers of Cu and Ni. This time we will propose a memory of Au/CuOx/(CuxNiySiz)On/NiSi/n-Si structure using Cu and NiSi, two different materials with different oxidizing power. Its basic operating characteristics are shown and the operating principle is discussed.