[9p-PB4-1~11] 16.1 Fundamental properties, evaluation, process and devices in disordered materials

[9p-PB4-9] Preparation and evaluation of a-Si:H for near-infrared filter by DC sputterung method

〇Yoshio Kawamata¹, Horoshi Ito¹ (1.National Inst. of tech. Tokyo college)

Keywords:a-Si:H, Sputtering, Substrate tempearture

In late years film formation of a-Si:H was demanded from an optics multilayer filter of near-infrared wave length region, but characteristic stability, productivity included a problem.
We prepared a-S:H by the DC sputtering method suitable for the industrialization this time and investigated a characteristic there. In particular we investigated optics absorption k properties of a wavelength 940nm domain used in wireless remote controllers etc..,
As a result, we can confirm that k (λ 940nm) decreases by H2 addition and heating film formation , post anneal process, and report it because possibility of the optics filter making that there are few losses was suggested.