The 66th JSAP Spring Meeting, 2019

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21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[9p-S011-1~13] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Sat. Mar 9, 2019 1:45 PM - 5:15 PM S011 (South Lecture Bldg.)

Yukiharu Uraoka(NAIST), Takayoshi Oshima(Saga Univ.)

4:45 PM - 5:00 PM

[9p-S011-12] Relation between emission spots and reverse leakage current in HVPE (001) β-Ga2O3 Schottky barrier diodes

〇Makoto Kasu1, Eitetsu Katagiri1, Kohei Sasaki2, Katsumi Kawasaki3, Jun Hirabayashi3, Shigenobu Yamakoshi4, Akito Kuramata2 (1.Saga Univ., 2.Novel Crystal Tech., 3.TDK Corp., 4.Tamura Corp.)

Keywords:gallium oxide, power device, defect

We report relation between emission spots and reverse leakage current in HVPE (001) β-Ga2O3 Schottky barrier diodes