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21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[9p-S011-1~13] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Sat. Mar 9, 2019 1:45 PM - 5:15 PM S011 (South Lecture Bldg.)

Yukiharu Uraoka(NAIST), Takayoshi Oshima(Saga Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:45 PM - 2:00 PM

[9p-S011-1] [Young Scientist Presentation Award Speech] Drastic improvement of Schottky diode properties by Ar+O₂+H₂ sputtered In–Ga–Zn–O

〇Yusaku Magari¹, Kenichiro Hamada¹, Kentaro Masuda¹, Mamoru Furuta^1,2 (1.Kochi Univ. of Tech., 2.Research Institute, KUT)

2:00 PM - 2:15 PM

[9p-S011-2] Analysis of IGZO crystalline region stability by first principles calculation

〇Tomonori Nakayama¹, Masahiro Takahashi¹, Tomosato Kanagawa¹, Toshimitsu Obonai¹, Kenichi Okazaki¹, Shunpei Yamazaki¹ (1.SEL)

2:15 PM - 2:30 PM

[9p-S011-3] Structural analysis and FET characteristics of crystalline IGZO films

〇Toshimitsu Obonai¹, Yasuharu Hosaka¹, Kenichi Okazaki¹, Shunpei Yamazaki¹ (1.SEL)

2:30 PM - 2:45 PM

[9p-S011-4] Hot-wire hydrogenation for In-Sn-Zn-O and improvement of the TFT reliability

〇Toshiki Yanagisawa¹, Yuta Someya¹, Kosaku Shimizu¹ (1.Nihon Univ.)

2:45 PM - 3:00 PM

[9p-S011-5] Crystal Orientation of NiO Thin Films Formed on (001) β-Ga₂O₃ Substrates

〇Shinji Nakagomi¹, Takashi Yasuda¹, Yoshihiro Kokubun¹ (1.Ishinomaki Senshu)

3:00 PM - 3:15 PM

[9p-S011-6] Reactive sputtering deposition of p-type NiO films using a helicon-wave-excited-plasma

〇Kohei Shima¹, Kazunobu Kojima¹, Shigefusa Chichibu¹ (1.IMRAM Tohoku Univ.)

3:15 PM - 3:30 PM

▲ [9p-S011-7] Growth of Tin Oxide Film with Buffer Layer on Sapphire Substrate by Mist Chemical Vapor Deposition

〇Thant Zin Win¹, Takumi Furukawa¹, Yudai Tanaka¹, Koshi Okita¹, Koji Sue², Zenji Yatabe^1,3, Yusui Nakamura^1,4,5 (1.GSST, Kumamoto Univ., 2.Fac. of Eng., Kumamoto Univ., 3.POIE, Kumamoto Univ., 4.FAST, Kumamoto Univ., 5.Kumamoto Phoenics)

3:45 PM - 4:00 PM

[9p-S011-8] The origin of extreme low off-current for crystalline IGZO FET

〇Haruyuki Baba¹, Shota Mizukami¹, Kazuki Tsuda¹, Tatsuki Koshida¹, Syunpei Yamazaki¹ (1.SEL)

4:00 PM - 4:15 PM

▲ [9p-S011-9] Thermopower modulation clarification of the operating mechanism in wide bandgap BaSnO₃−SrSnO₃ solid-solution based thin film transistors

〇(P)ANUPKUMAR VINODRAY SANCHELA¹, Mian Wei², Hai Jun Cho^1,2, Hiromichi Ohta^1,2 (1.RIES-Hokkaido Univ., 2.IST-Hokkaido Univ.)

4:15 PM - 4:30 PM

[9p-S011-10] Evaluation of Dislocations in beta-Ga₂O₃ by X-ray Topography

〇Katsuhiko Nakai¹, Kengo Noami¹, Toshiro Futagi¹, Etsuko Ohba², Keigo Hoshikawa³ (1.NSST, 2.Fujikoshi Machinery, 3.Shinshu Univ.)

4:30 PM - 4:45 PM

[9p-S011-11] Synchrotron X-ray Topography Observation of Defects in vertical Bridgman-grown β-Ga₂O₃Single Crystal

〇Satoshi Masuya¹, Kohei Sasaki^2,3, Akito Kuramata^2,3, Takumi Kobayashi⁴, Keigo Hoshikawa⁵, Osamu Ueda⁶, Makoto Kasu¹ (1.Saga Univ., 2.Novel Crystal Tech., 3.Tamura Corp., 4.Fujikoshi Machinery Corp., 5.Shinshu Univ., 6.Kanazawa Inst. Tech.)

4:45 PM - 5:00 PM

[9p-S011-12] Relation between emission spots and reverse leakage current in HVPE (001) β-Ga₂O₃Schottky barrier diodes

〇Makoto Kasu¹, Eitetsu Katagiri¹, Kohei Sasaki², Katsumi Kawasaki³, Jun Hirabayashi³, Shigenobu Yamakoshi⁴, Akito Kuramata² (1.Saga Univ., 2.Novel Crystal Tech., 3.TDK Corp., 4.Tamura Corp.)

5:00 PM - 5:15 PM

[9p-S011-13] Control of carrier concentration in the wide rage for tin-doped In₂O₃ films by the state-of-the-art technology of oxygen-negative-ion irradiation

〇Yutaka Furubayashi¹, Tetsuya Yamamoto¹ (1.Research Inst., Kochi Univ. Tech.)

Session information

[9p-S011-1~13] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[9p-S011-1] [Young Scientist Presentation Award Speech] Drastic improvement of Schottky diode properties by Ar+O₂+H₂ sputtered In–Ga–Zn–O

[9p-S011-2] Analysis of IGZO crystalline region stability by first principles calculation

[9p-S011-3] Structural analysis and FET characteristics of crystalline IGZO films

[9p-S011-4] Hot-wire hydrogenation for In-Sn-Zn-O and improvement of the TFT reliability

[9p-S011-5] Crystal Orientation of NiO Thin Films Formed on (001) β-Ga₂O₃ Substrates

[9p-S011-6] Reactive sputtering deposition of p-type NiO films using a helicon-wave-excited-plasma

▲ [9p-S011-7] Growth of Tin Oxide Film with Buffer Layer on Sapphire Substrate by Mist Chemical Vapor Deposition

[9p-S011-8] The origin of extreme low off-current for crystalline IGZO FET

▲ [9p-S011-9] Thermopower modulation clarification of the operating mechanism in wide bandgap BaSnO₃−SrSnO₃ solid-solution based thin film transistors

[9p-S011-10] Evaluation of Dislocations in beta-Ga₂O₃ by X-ray Topography

[9p-S011-11] Synchrotron X-ray Topography Observation of Defects in vertical Bridgman-grown β-Ga₂O₃Single Crystal

[9p-S011-12] Relation between emission spots and reverse leakage current in HVPE (001) β-Ga₂O₃Schottky barrier diodes

[9p-S011-13] Control of carrier concentration in the wide rage for tin-doped In₂O₃ films by the state-of-the-art technology of oxygen-negative-ion irradiation

Authentication

Session information

[9p-S011-1~13] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

▲ [9p-S011-7] Growth of Tin Oxide Film with Buffer Layer on Sapphire Substrate by Mist Chemical Vapor Deposition

▲ [9p-S011-9] Thermopower modulation clarification of the operating mechanism in wide bandgap BaSnO3−SrSnO3 solid-solution based thin film transistors

Authentication

▲ [9p-S011-9] Thermopower modulation clarification of the operating mechanism in wide bandgap BaSnO₃−SrSnO₃ solid-solution based thin film transistors