[9p-S011-1~13] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[9p-S011-13] Control of carrier concentration in the wide rage for tin-doped In₂O₃ films by the state-of-the-art technology of oxygen-negative-ion irradiation

〇Yutaka Furubayashi¹, Tetsuya Yamamoto¹ (1.Research Inst., Kochi Univ. Tech.)

Keywords:Indium oxide, carrier control, oxygen negative ions

Sn-doped In₂O₃ (ITO) is widely applied to transparent conducting oxides because of its high electric conductivity and optical transparency, althrough with its resource problems. In most of previous reports, a control of its carrier density has been realized by a chemical doping or a post-annealing. On the other hand, there are few reports on a wide control of the carrier density of crystalized ITO films by using a postprocess after the growth. In this study, by using the irradiation of oxygen negative ions (O⁻), we have successfully controled the carrier density of the ITO films, from 9.3 × 10²⁰ cm^-3 to 1.2 × 10¹⁹ cm^-3.