The 66th JSAP Spring Meeting, 2019

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21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[9p-S011-1~13] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Sat. Mar 9, 2019 1:45 PM - 5:15 PM S011 (South Lecture Bldg.)

Yukiharu Uraoka(NAIST), Takayoshi Oshima(Saga Univ.)

3:15 PM - 3:30 PM

▲ [9p-S011-7] Growth of Tin Oxide Film with Buffer Layer on Sapphire Substrate by Mist Chemical Vapor Deposition

〇Thant Zin Win1, Takumi Furukawa1, Yudai Tanaka1, Koshi Okita1, Koji Sue2, Zenji Yatabe1,3, Yusui Nakamura1,4,5 (1.GSST, Kumamoto Univ., 2.Fac. of Eng., Kumamoto Univ., 3.POIE, Kumamoto Univ., 4.FAST, Kumamoto Univ., 5.Kumamoto Phoenics)

Keywords:SnO2, buffer layer, mist-CVD