The 66th JSAP Spring Meeting, 2019

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13 Semiconductors » 13.5 Semiconductor devices/ Interconnect/ Integration technologies

[9p-S221-1~15] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

Sat. Mar 9, 2019 1:45 PM - 5:45 PM S221 (S221)

Jiro Ida(Kanazawa Inst. of Tech.), Noriyuki Taoka(AIST)

4:15 PM - 4:30 PM

▲ [9p-S221-10] Saturated concentration of activated Sb in Sb-doped Ge epitaxial thin films

〇(D)Jihee Jeon1, Shigehisa Shibayama1, Osamu Nakatsuka1,2, Shigeaki Zaima3 (1.Nagoya Univ., 2.IMaSS, Nagoya Univ., 3.IIFS, Nagoya Univ.)

Keywords:Ge, n-type doping