[9p-S221-1~15] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

[9p-S221-11] Diffusion properties of n-type dopants diffused from Spin on Glass into Ge

〇Ryotaro Takaguchi¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (1.Univ. Tokyo)

Keywords:Spin on Glass, Impurity diffusion, Tunneling FET

To improve p-channel TFET performance, source n⁺-p junctions with low defects, high concentration, and steep impurity profiles are needed. In this study, we doped Ge by solid-phase diffusion from SOG and modeled n-type dopant diffusion in Ge in order to provide a guideline for achieving steep impurity profiles. Consequently, low temperature diffusion is better to obtain steep impurity profiles, since intrinsic carrier concentration is low at low temperature.