Low Contact Resistance between MoSi<sub>2</sub> and Sputtered MoS<sub>2</sub> by F.G. annealing

kentarou matsuura; Masaya Hamada; Takuro Sakamoto; Haruki Tanigawa; Iriya Muneta; Seiya Ishihara; Kuniyuki Kakushima; Kazuo Tsutsui; Atsushi Ogura; Hitoshi Wakabayashi

Presentation information

Oral presentation

13 Semiconductors » 13.5 Semiconductor devices/ Interconnect/ Integration technologies

[9p-S221-1~15] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

Sat. Mar 9, 2019 1:45 PM - 5:45 PM S221 (S221)

Jiro Ida(Kanazawa Inst. of Tech.), Noriyuki Taoka(AIST)

5:15 PM - 5:30 PM

[9p-S221-14] Low Contact Resistance between MoSi₂ and Sputtered MoS₂ by F.G. annealing

〇(DC)kentarou matsuura¹, Masaya Hamada¹, Takuro Sakamoto¹, Haruki Tanigawa¹, Iriya Muneta¹, Seiya Ishihara², Kuniyuki Kakushima¹, Kazuo Tsutsui¹, Atsushi Ogura², Hitoshi Wakabayashi¹ (1.Tokyo Tech, 2.Meiji Univ)

Keywords:Molybdenum Disulfide, Molybdenum Disilicide, Contact Resistance

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Presentation information

[9p-S221-1~15] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

[9p-S221-14] Low Contact Resistance between MoSi2 and Sputtered MoS2 by F.G. annealing

[9p-S221-14] Low Contact Resistance between MoSi₂ and Sputtered MoS₂ by F.G. annealing