[9p-S422-1~13] 15.1 Bulk crystal growth

[9p-S422-10] Optimization of Crucible Temperature Distribution during TSSG-SiC Growth by Inverse Analysis

〇Yasunori Okano¹, Takashi Horiuchi¹, Atsushi Sekimoto¹, Toru Ujihara² (1.Osaka Univ, 2.Nagoya Univ)

Keywords:Numerical simulation, SiC, TSSG method

An adjoint-based sensitivity analysis was performed to determine the optimal crucible temperature profile for growth of high quality SiC crystal growth by RF-TSSG method. The sensitivity showed the middle area of the crucible side is the most important area for the temperature modification for the initial state. The optimized temperature condition showed that the growth-rate uniformity is significantly improved with high growth rate. Furthermore, this optimized condition is in a stable condition range for the growth rate uniformity about the crucible-temperature perturbation.