[9p-S422-1~13] 15.1 Bulk crystal growth

[9p-S422-11] Demonstration of High-Speed Growth of φ4 inch Thick 4H-SiC Single Crystals by High Temperature Chemical Vapor Deposition (HTCVD) Method

〇Yuichiro Tokuda¹, Hironari Kuno¹, Hideyuki Uehigashi¹, Takeshi Okamoto¹, Takahiro Kanda¹, Nobuyuki Ohya¹, Norihiro Hoshino², Isaho Kamata², Hidekazu Tsuchida² (1.DENSO CORPORATION, 2.CRIEPI)

Keywords:silicon carbide, crystal growth, HTCVD growth

We have been developing high temperature chemical vapor deposition (HTCVD) method for realization of low cost and high throughput growth technique of high quality 4H-SiC bulk crystals. Influence of process condition on growth rate was investigated by crystal growth simulation. Based on the simulation, we designed the reactor and process window for the optimized reactor was studied by crystal growth experiment. Finally, we conducted 10 h crystal growth at optimized condition. As a result,φ4 inches x 20 mm 4H-SiC crystal growth at high-speed of 2 mm/h was demonstrated.