[9p-W611-1~8] 16.3 Bulk, thin-film and other silicon-based solar cells

[9p-W611-7] Counter doping of boron doped a-Si by plasma ion implantation—the dependence of passivation quality of counter-doped n-a-Si films on boron concentration—

〇(P)Tu ThiCam Huynh¹, Koichi Higashimine¹, Noboru Yamaguchi², Hideo Suzuki², Keisuke Ohdaira¹, Hideki Matsumura¹ (1.JAIST, 2.ULVAC)

Keywords:IBC c-Si solar cell, counter doping, plasma ion implantation