Yuto Kawasumi

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Speaker, Author, Co-Author

Thu. Sep 10, 2020 1:00 PM - 5:30 PM Z04

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[10p-Z04-1~17] 13.7 Compound and power electron devices and process technology

2:00 PM - 2:15 PM

[10p-Z04-5] Two-dimensional characterization of PEC gate-recess-etched AlGaN/GaN HEMT structure by scanning internal photoemission microscopy

〇Yuto Kawasumi¹, Fumimasa Horikiri², Noboru Fukuhara², Kenji Shiojima¹ (1.Univ. of Fukui, 2.SCIOCS Co.)