Shuntaro Ikeda

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Speaker, Author, Co-Author

Fri. Sep 11, 2020 1:30 PM - 5:45 PM Z29

Oral presentation
| 17 Nanocarbon Technology
| 17.3 Layered materials

[11p-Z29-1~16] 17.3 Layered materials

4:45 PM - 5:00 PM

[11p-Z29-13] Study on high performance TMD-TFET using hBN as gate insulator

〇Shuntaro Ikeda¹, Hidemitsu Ouchi¹, Kohei Sakanashi¹, Peter Krueger¹, Kenji Watanabe², Takashi Taniguchi², Jonathan Bird³, Nobuyuki Aoki¹ (1.Chiba Univ., 2.NIMS, 3.Univ. at Buffalo)

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