Oral presentation

17 Nanocarbon Technology » 17.3 Layered materials

[11p-Z29-1~16] 17.3 Layered materials

Fri. Sep 11, 2020 1:30 PM - 5:45 PM Z29

Takamasa Kawanago(Tokyo Tech), Daisuke Kiriya(Osaka Pref. Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 1:45 PM

[11p-Z29-1] Mobility-modulated response to NO₂ of photoactivated MoS₂ gas sensor

〇Hiroshi Tabata¹, Hiroaki Matsuyama¹, Taishi Goto¹, Tatuki Hinamoto², Hiroshi Sugimoto², Osamu Kubo¹, Minoru Fujii², Mitsuhiro Katayama¹ (1.Osaka Univ., 2.Kobe Univ.)

1:45 PM - 2:00 PM

[11p-Z29-2] Response activation under visible light of gas sensor based on monolayer MoS₂

〇Taishi Goto¹, Hiroaki Matsuyama¹, Hiroshi Tabata¹, Osamu Kubo¹, Mitsuhiro Katayama¹ (1.Osaka Univ.)

2:00 PM - 2:15 PM

[11p-Z29-3] Sensor application of MoS₂ FETs using SAM gate dielectrics.

〇Masaki Ogura¹, Takahiko Ban¹, Shin-ichi Yamamoto¹ (1.Ryukoku Univ.)

2:15 PM - 2:30 PM

[11p-Z29-4] Hydrogen adsorption effects on the electronic properties of TaS₂

〇Yasushi Ishiguro¹, Naoko Kodama², Kirill Bogdanov³, Alexander Baranov³, Kazuyuki Takai^1,2 (1.Dept. of Chemical Science and Technology, Hosei Univ., 2.Graduate School of Science and Engineering, Hosei Univ., 3.ITMO University)

2:30 PM - 2:45 PM

▲ [11p-Z29-5] Tunable Optical Properties of Copper Phthalocyanine Molecules Adsorbed on MoS₂ Based Field Effect Transistor

〇(DC)Md Iftekharul Alam¹, Tsuyoshi Takaoka¹, Hiroki Waizumi¹, M. Shamim Al Mamun¹, Yudai Tanaka¹, Tadahiro Komeda² (1.Tohoku Univ., 2.IMRAM, Tohoku Univ.)

2:45 PM - 3:00 PM

[11p-Z29-6] Observation of Electronic State Change due to Molecular Adsorption on MoS₂ Surface using Ultraviolet Photoelectron Spectroscopy

〇Hiroki Waizumi¹, Yudai Tanaka¹, Kousei Takahashi¹, Md Iftekharul Alam¹, Muhammad Shamim Al Mamun¹, Tsuyoshi Takaoka², Tadahiro Komeda² (1.Tohoku Univ., 2.IMRAM, Tohoku Univ.)

3:15 PM - 3:30 PM

▲ [11p-Z29-7] Microfluidic Tank Engineering and Functionalization of Two Dimensional MoS₂ by Nicotine

〇(DC)MuhammadShamimAl Mamun¹, Yudai Tanaka¹, Hiroki Waizumi¹, Tsuyoshi Takaoka², Zhipeng Wang¹, Md Iftekharul Alam¹, Atsushi Ando³, Tadahiro Komeda² (1.Tohoku University, 2.IMRAM, Tohoku Univ., 3.AIST, Tsukuba, Japan)

3:30 PM - 3:45 PM

[11p-Z29-8] MoS₂-FET Operated Under the Fluids and Drops

〇Yudai Tanaka¹, Tsuyoshi Takaoka², Hiroki Waizumi¹, Md Iftekharul Alam¹, Muhammed Shamim Al Mamun¹, Tadahiro Komeda² (1.Tohoku Univ., 2.IMRAM, Tohoku Univ.)

3:45 PM - 4:00 PM

△ [11p-Z29-9] Development of MoS₂ Biosensor for Measurement of DMF Concentration in Culture Fluid

〇Akito Fukui¹, Takahiro Nagata², Yuh Hijikata³, Jenny Pirillo³, Takeshi Yoshimura¹, Atsushi Ashida¹, Norifumi Fujimura¹, Daisuke Kiriya¹ (1.Osaka Pref. Univ., 2.National Institute for Materials Science, 3.Hokkaido Univ.)

4:00 PM - 4:15 PM

[11p-Z29-10] Understanding the memory window overestimation of 2D memory devices by measuring floating gate voltage

〇Taro Sasaki¹, Keiji Ueno², Takashi Taniguchi³, Kenji Watanabe³, Tomonori Nishimura¹, Kosuke Nagashio¹ (1.Tokyo Univ., 2.Saitama Univ., 3.NIMS)

4:15 PM - 4:30 PM

△ [11p-Z29-11] V_FG trajectory based understanding of 2D memory device operation

〇Taro Sasaki¹, Keiji Ueno², Takashi Taniguchi³, Kenji Watanabe³, Tomonori Nishimura¹, Kosuke Nagashio¹ (1.Tokyo Univ., 2.Saitama Univ., 3.NIMS)

4:30 PM - 4:45 PM

[11p-Z29-12] Investigation of contact resistance from edge of MoS₂ using vertical grown MoS₂ thin film

〇Joonam Kim^1,2, Takato Takaesu¹, Takenobu Funatsu¹, Mutsumi Sugiyama^1,2 (1.Tokyo Univ. of Sci., 2.RIST TUS)

4:45 PM - 5:00 PM

[11p-Z29-13] Study on high performance TMD-TFET using hBN as gate insulator

〇Shuntaro Ikeda¹, Hidemitsu Ouchi¹, Kohei Sakanashi¹, Peter Krueger¹, Kenji Watanabe², Takashi Taniguchi², Jonathan Bird³, Nobuyuki Aoki¹ (1.Chiba Univ., 2.NIMS, 3.Univ. at Buffalo)

5:00 PM - 5:15 PM

[11p-Z29-14] Electrical control of resonance frequency of drum-type hBN
nanomechanical resonator by photothermal induction method

〇Yusuke Morimoto¹, Kuniharu Takei¹, Takayuki Arie¹, Seiji Akita¹ (1.Osaka Pref. Univ.)

5:15 PM - 5:30 PM

[11p-Z29-15] Formation of multi-layer graphene electrodes for electrical conductivity measurements
of thick atomic layer materials

〇(M2)Kazuki Hanyu¹, Liang Haoyun¹, Hikari Tomori¹, Akinobu Kanda¹ (1.Univ. Tsukuba)

5:30 PM - 5:45 PM

[11p-Z29-16] The demonstration of SS below 60 mV/dec at RT in all 2D heterostructure TFET

Keigo Nakamura¹, Naoka Nagamura², Keiji Ueno³, Takashi Taniguchi², Kenji Watanabe², 〇Kosuke Nagashio¹ (1.UTokyo, 2.NIMS, 3.Saitama Univ.)

Session information

[11p-Z29-1~16] 17.3 Layered materials

[11p-Z29-1] Mobility-modulated response to NO₂ of photoactivated MoS₂ gas sensor

[11p-Z29-2] Response activation under visible light of gas sensor based on monolayer MoS₂

[11p-Z29-3] Sensor application of MoS₂ FETs using SAM gate dielectrics.

[11p-Z29-4] Hydrogen adsorption effects on the electronic properties of TaS₂

▲ [11p-Z29-5] Tunable Optical Properties of Copper Phthalocyanine Molecules Adsorbed on MoS₂ Based Field Effect Transistor

[11p-Z29-6] Observation of Electronic State Change due to Molecular Adsorption on MoS₂ Surface using Ultraviolet Photoelectron Spectroscopy

▲ [11p-Z29-7] Microfluidic Tank Engineering and Functionalization of Two Dimensional MoS₂ by Nicotine

[11p-Z29-8] MoS₂-FET Operated Under the Fluids and Drops

△ [11p-Z29-9] Development of MoS₂ Biosensor for Measurement of DMF Concentration in Culture Fluid

[11p-Z29-10] Understanding the memory window overestimation of 2D memory devices by measuring floating gate voltage

△ [11p-Z29-11] V_FG trajectory based understanding of 2D memory device operation

[11p-Z29-12] Investigation of contact resistance from edge of MoS₂ using vertical grown MoS₂ thin film

[11p-Z29-13] Study on high performance TMD-TFET using hBN as gate insulator

[11p-Z29-14] Electrical control of resonance frequency of drum-type hBN
nanomechanical resonator by photothermal induction method

[11p-Z29-15] Formation of multi-layer graphene electrodes for electrical conductivity measurements
of thick atomic layer materials

[11p-Z29-16] The demonstration of SS below 60 mV/dec at RT in all 2D heterostructure TFET

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Session information

[11p-Z29-1~16] 17.3 Layered materials

▲ [11p-Z29-5] Tunable Optical Properties of Copper Phthalocyanine Molecules Adsorbed on MoS2 Based Field Effect Transistor

▲ [11p-Z29-7] Microfluidic Tank Engineering and Functionalization of Two Dimensional MoS2 by Nicotine

△ [11p-Z29-9] Development of MoS2 Biosensor for Measurement of DMF Concentration in Culture Fluid

△ [11p-Z29-11] VFG trajectory based understanding of 2D memory device operation

Authenticate

▲ [11p-Z29-5] Tunable Optical Properties of Copper Phthalocyanine Molecules Adsorbed on MoS₂ Based Field Effect Transistor

▲ [11p-Z29-7] Microfluidic Tank Engineering and Functionalization of Two Dimensional MoS₂ by Nicotine

△ [11p-Z29-9] Development of MoS₂ Biosensor for Measurement of DMF Concentration in Culture Fluid

△ [11p-Z29-11] V_FG trajectory based understanding of 2D memory device operation