Shun Kawashima

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Speaker, Author, Co-Author

Thu. Sep 10, 2020 12:30 PM - 6:00 PM Z09

Oral presentation
| 13 Semiconductors
| 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[10p-Z09-1~20] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

4:00 PM - 4:15 PM

[10p-Z09-13] TCAD simulation of BTI characteristics influenced by Oxygen Vacancies in Al₂O₃/GeO₂/Ge pMOSFET

〇Shun Kawashima¹, Mengnan Ke¹, Takayuki Kawahara¹ (1.Tokyo Univ. of Science)