Hiroaki Hanafusa

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Speaker, Author, Co-Author

Fri. Sep 11, 2020 9:00 AM - 11:30 AM Z23

Oral presentation
| 15 Crystal Engineering
| 15.6 Group IV Compound Semiconductors (SiC)

[11a-Z23-1~9] 15.6 Group IV Compound Semiconductors (SiC)

11:00 AM - 11:15 AM

[11a-Z23-8] Analysis of Electrical Conduction Mechanism on 4H-SiC Surface after Silicon-Cap-Annealing

〇Hiroaki Hanafusa¹, Daichi Todo², Seiichiro Higashi¹ (1.Hiroshima Univ., 2.Hiroshima Univ. AdSM)