Oral presentation

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

[11a-Z23-1~9] 15.6 Group IV Compound Semiconductors (SiC)

Fri. Sep 11, 2020 9:00 AM - 11:30 AM Z23

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

△ [11a-Z23-1] Effects of High-Temperature Annealing and Thermal Oxidation on Fermi level of High-Purity Semi-Insulating 4H-SiC Substrates

〇Chansoon Koo¹, Mitsuaki Kaneko¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)

9:15 AM - 9:30 AM

△ [11a-Z23-2] Theoretical Analysis on Band Structure Dependence of Impact Ionization Coefficients

〇Hajime Tanaka^1,2, Tsunenobu Kimoto¹, Nobuya Mori² (1.Kyoto Univ., 2.Osaka Univ.)

9:30 AM - 9:45 AM

△ [11a-Z23-3] Characterization of the electron mobility along the c-axis in 4H-SiC

〇Ryoya Ishikawa¹, Masahiro Hara¹, Mitsuaki Kaneko¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)

9:45 AM - 10:00 AM

△ [11a-Z23-4] Characterization of lateral spread of implanted ions in a SiC substrate by scanning electron microscopy and scanning capacitance microscopy

〇Qimin Jin¹, Masashi Nakajima¹, Mitsuaki Kaneko¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)

10:15 AM - 10:30 AM

[11a-Z23-5] Relationship between Al Concentration and Temperature Dependent Electrical Resistivity in Heavily Al-Doped p-Type 4H-SiC Epilayers
with Al Concentration of First Half of 10²⁰ cm^-3

〇(M1)Yuki Kondo¹, Akinobu Takeshita¹, Tatsuya Imamura¹, Kota Takano¹, Kazuya Okuda¹, Atsuki Hidaka¹, Hideharu Matsuura¹, Shiyang Ji², Kazuma Eto², Kazutoshi Kojima², Tomohisa Kato², Sadafumi Yoshida², Hajime Okumura² (1.Osaka Electro-Communication Univ., 2.AIST Advanced Power Electronics Research Center)

10:30 AM - 10:45 AM

[11a-Z23-6] Discussion on Reported Misorientation-Dependent Al Concentrations in 4H-SiC Layers Grown on (0001) and (000-1) Substrates by Chemical Vapor Deposition

〇Kazuhiro Mochizuki¹, Tomoyoshi Mishima¹ (1.Hosei Univ.)

10:45 AM - 11:00 AM

[11a-Z23-7] Analysis of ease of incorporating carbon vacancies near the surface of 4H-SiC(0001)

〇Hibiki Nakashima¹, Yoshiaki Daigo², Ichiro Mizushima^2,3, Takashi Yoda^2,3, Kenta Chokawa¹, Kenji Shiraishi¹ (1.Nagoya Univ., 2.NuFlare Technology, Inc., 3.FIRST, Tokyo Institute of Technology)

11:00 AM - 11:15 AM

[11a-Z23-8] Analysis of Electrical Conduction Mechanism on 4H-SiC Surface after Silicon-Cap-Annealing

〇Hiroaki Hanafusa¹, Daichi Todo², Seiichiro Higashi¹ (1.Hiroshima Univ., 2.Hiroshima Univ. AdSM)

11:15 AM - 11:30 AM

[11a-Z23-9] Visualization of Thermal Diffusion Process in SiC Wafer by Optical-Interference Contactless Thermometer (OICT)

〇Keiya Fujimoto¹, Tatsuki Koyanagi², Yuri Mizukawa¹, Hiroaki Hanafusa¹, Seiichiro Higashi¹ (1.AdSE,Hiroshima Univ., 2.AdSM,Hiroshima Univ.)

Session information

[11a-Z23-1~9] 15.6 Group IV Compound Semiconductors (SiC)

△ [11a-Z23-1] Effects of High-Temperature Annealing and Thermal Oxidation on Fermi level of High-Purity Semi-Insulating 4H-SiC Substrates

△ [11a-Z23-2] Theoretical Analysis on Band Structure Dependence of Impact Ionization Coefficients

△ [11a-Z23-3] Characterization of the electron mobility along the c-axis in 4H-SiC

△ [11a-Z23-4] Characterization of lateral spread of implanted ions in a SiC substrate by scanning electron microscopy and scanning capacitance microscopy

[11a-Z23-5] Relationship between Al Concentration and Temperature Dependent Electrical Resistivity in Heavily Al-Doped p-Type 4H-SiC Epilayers
with Al Concentration of First Half of 10²⁰ cm^-3

[11a-Z23-6] Discussion on Reported Misorientation-Dependent Al Concentrations in 4H-SiC Layers Grown on (0001) and (000-1) Substrates by Chemical Vapor Deposition

[11a-Z23-7] Analysis of ease of incorporating carbon vacancies near the surface of 4H-SiC(0001)

[11a-Z23-8] Analysis of Electrical Conduction Mechanism on 4H-SiC Surface after Silicon-Cap-Annealing

[11a-Z23-9] Visualization of Thermal Diffusion Process in SiC Wafer by Optical-Interference Contactless Thermometer (OICT)

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Session information

[11a-Z23-1~9] 15.6 Group IV Compound Semiconductors (SiC)

△ [11a-Z23-1] Effects of High-Temperature Annealing and Thermal Oxidation on Fermi level of High-Purity Semi-Insulating 4H-SiC Substrates

△ [11a-Z23-2] Theoretical Analysis on Band Structure Dependence of Impact Ionization Coefficients

△ [11a-Z23-3] Characterization of the electron mobility along the c-axis in 4H-SiC

△ [11a-Z23-4] Characterization of lateral spread of implanted ions in a SiC substrate by scanning electron microscopy and scanning capacitance microscopy

[11a-Z23-5] Relationship between Al Concentration and Temperature Dependent Electrical Resistivity in Heavily Al-Doped p-Type 4H-SiC Epilayerswith Al Concentration of First Half of 1020 cm-3

[11a-Z23-6] Discussion on Reported Misorientation-Dependent Al Concentrations in 4H-SiC Layers Grown on (0001) and (000-1) Substrates by Chemical Vapor Deposition

[11a-Z23-7] Analysis of ease of incorporating carbon vacancies near the surface of 4H-SiC(0001)

[11a-Z23-8] Analysis of Electrical Conduction Mechanism on 4H-SiC Surface after Silicon-Cap-Annealing

[11a-Z23-9] Visualization of Thermal Diffusion Process in SiC Wafer by Optical-Interference Contactless Thermometer (OICT)

Authenticate

[11a-Z23-5] Relationship between Al Concentration and Temperature Dependent Electrical Resistivity in Heavily Al-Doped p-Type 4H-SiC Epilayers
with Al Concentration of First Half of 10²⁰ cm^-3