[11a-Z23-1~9] 15.6 Group IV Compound Semiconductors (SiC)

10:15 AM - 10:30 AM

[11a-Z23-5] Relationship between Al Concentration and Temperature Dependent Electrical Resistivity in Heavily Al-Doped p-Type 4H-SiC Epilayers
with Al Concentration of First Half of 10²⁰ cm^-3

〇(M1)Yuki Kondo¹, Akinobu Takeshita¹, Tatsuya Imamura¹, Kota Takano¹, Kazuya Okuda¹, Atsuki Hidaka¹, Hideharu Matsuura¹, Shiyang Ji², Kazuma Eto², Kazutoshi Kojima², Tomohisa Kato², Sadafumi Yoshida², Hajime Okumura² (1.Osaka Electro-Communication Univ., 2.AIST Advanced Power Electronics Research Center)

Yuki Kondo

Speaker, Author, Co-Author

[11a-Z23-1~9] 15.6 Group IV Compound Semiconductors (SiC)

[11a-Z23-5] Relationship between Al Concentration and Temperature Dependent Electrical Resistivity in Heavily Al-Doped p-Type 4H-SiC Epilayerswith Al Concentration of First Half of 1020 cm-3

[11a-Z23-5] Relationship between Al Concentration and Temperature Dependent Electrical Resistivity in Heavily Al-Doped p-Type 4H-SiC Epilayers
with Al Concentration of First Half of 10²⁰ cm^-3