[11a-Z23-1~9] 15.6 Group IV Compound Semiconductors (SiC)

[11a-Z23-5] Relationship between Al Concentration and Temperature Dependent Electrical Resistivity in Heavily Al-Doped p-Type 4H-SiC Epilayers
with Al Concentration of First Half of 10²⁰ cm^-3

〇(M1)Yuki Kondo¹, Akinobu Takeshita¹, Tatsuya Imamura¹, Kota Takano¹, Kazuya Okuda¹, Atsuki Hidaka¹, Hideharu Matsuura¹, Shiyang Ji², Kazuma Eto², Kazutoshi Kojima², Tomohisa Kato², Sadafumi Yoshida², Hajime Okumura² (1.Osaka Electro-Communication Univ., 2.AIST Advanced Power Electronics Research Center)

Keywords:p-Type 4H-SiC, Al Concentration of First Half of 10^20 cm^-3, Temperature Dependent Electrical Resistivity

本研究ではCVD法による試料における、C_Al が1.8×10²⁰ cm^-3から3.5×10²⁰ cm^-3の超高濃度Al ドープ4H-SiC の抵抗率の温度依存性（ln ρ(T) –T^-1/4）とC_Alとの関係について議論する。