The 81st JSAP Autumn Meeting, 2020

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Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[10a-Z02-1~9] 15.4 III-V-group nitride crystals

Thu. Sep 10, 2020 9:00 AM - 11:30 AM Z02

Ryuji Katayama(Osaka Univ.), Hiroto Sekiguchi(Toyohashi Univ. of Tech.)

11:15 AM - 11:30 AM

[10a-Z02-9] Growth and characterization of vertical p-type GaN Schottky barrier diodes

〇Kohei Ueno1, Keita Shibahara1, Atsushi Kobayashi1, Hiroshi Fujioka1 (1.IIS, The Univ. of Tokyo)

Keywords:GaN, Sputtering, Schottky barrier diode