The 81st JSAP Autumn Meeting, 2020

Presentation information

Oral presentation

8 Plasma Electronics » 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[10a-Z03-1~8] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

Thu. Sep 10, 2020 9:00 AM - 11:00 AM Z03

Takayuki Ohta(Meijo Univ.)

10:00 AM - 10:15 AM

[10a-Z03-5] Nitriding of steel surface by dielectric barrier discharge atmospheric pressure plasma

Hiroshi Okawa1, Shiki Sato1, Tetsuya Akitsu2,1 (1.HSU, 2.Yamanashi Univ.)

Keywords:atmospheric pressure plasma, Nitriding

We have been developed the dielectric barrier discharge at atmospheric pressure, which does not need vacuum equipment. This device performs nitriding treatment in atmospheric pressure plasma generated by dielectric barrier discharge. The base gas is helium mixed nitrogen. The power supply frequency is 13.56MHz. A SUS430 plate, 15 mm square is placed in the plasma region. The plate is heated to about 700°C placed on a ceramic heater. After 2 hours treatment, the surface hardness of the sample increased to a maximum of HV860, although partially, from HV160 before the treatment.