Oral presentation

[10a-Z03-1~8] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

Thu. Sep 10, 2020 9:00 AM - 11:00 AM Z03

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[10a-Z03-1] Generation of powder from liquid raw material using atmospheric pressure plasma

Momoyo Takahashi¹, Youki Ohkubo¹, Takayuki Kitagawa¹, Kazuyuki Noborio¹, 〇Kohshi Taguchi^1,2 (1.Sakigake-S Co., Ltd., 2.Checkers Co., Ltd.)

9:15 AM - 9:30 AM

[10a-Z03-2] Mechanism of Surface Modification for Fluororesin by Vacuum Plasma

〇Shinya Ueno¹, Kazuyuki Noborio², Koshi Taguchi^1,2 (1.Sakigake-S Co., Ltd., 2.SAKIGAKE Co., Ltd)

9:30 AM - 9:45 AM

[10a-Z03-3] Deposition of tungsten nitride films by thermal CVD using liquid source material

〇Takayuki Kobayashi¹, Masayuki Nakamura¹, Toshiaki Tatsuta¹, Shin-ichi Motoyama¹ (1.Samco)

9:45 AM - 10:00 AM

[10a-Z03-4] Enhanced radical nitriding of graphene by gold nanoparticle plasmons

〇Ginga Sato¹, Takeshi Kitajima¹, Toshiki Nakano¹ (1.National Defense Aca)

10:00 AM - 10:15 AM

[10a-Z03-5] Nitriding of steel surface by dielectric barrier discharge atmospheric pressure plasma

〇Hiroshi Okawa¹, Shiki Sato¹, Tetsuya Akitsu^2,1 (1.HSU, 2.Yamanashi Univ.)

10:15 AM - 10:30 AM

[10a-Z03-6] Prediction of conductivity at Si/SiO₂ interface due to impurities originating from deposition precursors

〇HU LI¹, Kouji Inagaki², Yoshitada Morikawa² (1.TEL Technology Solutions, 2.Osaka Univ.)

10:30 AM - 10:45 AM

[10a-Z03-7] Reduction of MWCNTs wall thickness by plasma treatment

〇Kohei Nishimura¹, Daisuke Ogawa¹, Keiji Nakamura¹, Hideo Uchida¹ (1.Chubu Univ.)

10:45 AM - 11:00 AM

[10a-Z03-8] Numerical Analysis of Input-Power Dependence of DLC Film Deposition Process by Low-Pressure and Radio Frequency Ar/CH₄ plasma-enhanced CVD

〇(M1)Koichi Ishii¹, Shin Ogawa¹, Akinori Oda¹ (1.ChibaTech.)

Oral presentation

[11p-Z03-3~12] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

Fri. Sep 11, 2020 1:30 PM - 4:15 PM Z03

Kenji Ishikawa(Nagoya Univ.), Makoto Satake(Hitachi)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

+Add all to schedule

1:30 PM - 1:45 PM

[11p-Z03-3] Generation and annihilation of plasma-induced defects ~effects on c-Si surface passivation~

〇Shota Nunomura¹, Isao Sakata¹, Hajime Sakakita¹, Kazunori Koga^2,3, Masaharu Shiratani² (1.AIST RIAEP, 2.Kyushu Univ, 3.NINS)

1:45 PM - 2:00 PM

△ [11p-Z03-4] Electrical Analysis of Distributions of Defects in Si Substrates Introduced by Plasma Exposure Under Various Surface Conditions

〇Tomohiro Kuyama^1,2, Shohei Yura¹, Keiichiro Urabe¹, Koji Eriguchi¹ (1.Kyoto Univ., 2.JSPS Research Fellow)

2:00 PM - 2:15 PM

△ [11p-Z03-5] Characterization of Plasma Process-Induced Defect States in SiO₂ Films Using Transient Current Analysis

〇Takashi Hamano^1,2, Keiichiro Urabe¹, Koji Eriguchi¹ (1.Kyoto Univ., 2.JSPS Research Fellow)

2:15 PM - 2:30 PM

△ [11p-Z03-6] Analysis of Hydrogen-induced Damage in SiN Atomic Layer Etching

〇Akiko Hirata^1,2, Masanaga Fukasawa¹, Katsuhisa Kugimiya¹, Yoshiya Hagimoto¹, Hayato Iwamoto¹, Tercero Jomar², Michiro Isobe², Tomoko Ito², Kazuhiro Karahashi², Satoshi Hamaguchi² (1.Sony Semiconductor Solutions Corp., 2.Osaka Univ.)

2:30 PM - 2:45 PM

▼ [11p-Z03-7] Surface fluorination of Y₂O₃ irradiated by low energy CF₃⁺ ion and F⁺ ion

〇(M2)Hojun Kang¹, Tomoko Ito¹, Junghwan Um², Hikaru Kokura², Taekyun Kang², Sungil Cho², Hyunjung Park², Kazuhiro Karahashi¹, Satoshi Hamaguchi¹ (1.Osaka Univ., 2.Samsung Electronics)

3:00 PM - 3:15 PM

△ [11p-Z03-8] Fluorine injection into III-V semiconductor compounds by diffusion and knock-on

〇Yoshinori Kodama¹, Yoshifumi Zaizen¹, Masanaga Fukasawa¹, Katsuhisa Kugimiya¹, Yoshiya Hagimoto¹, Hayato Iwamoto¹ (1.Sony Semiconductor Solutions Corp.)

3:15 PM - 3:30 PM

[11p-Z03-9] Characteristics of transition metal thermal etching by β-diketon gases

〇Tomoko Ito¹, Kazuhiro Karahashi¹, Satoshi Hamaguchi¹ (1.Osaka Univ.)

3:30 PM - 3:45 PM

△ [11p-Z03-10] Change in charge density at the bottom of capillary plate in a pulse modulated CCP

〇Naoya Nakahara¹, Makoto Moriyama¹, Haruka Suzuki^1,2, Hirotaka Toyoda^1,2,3 (1.Nagoya Univ., 2.cLPS, 3.NIFS)

3:45 PM - 4:00 PM

[11p-Z03-11] Plasma etching by using PTFE

Youki Ohkubo¹, Momoyo Takahashi¹, Takayuki Kitagawa¹, Kazuyuki Noborio¹, 〇Kohshi Taguchi^1,2 (1.Sakigake-S Co., Ltd., 2.Checkers Co., Ltd.)

4:00 PM - 4:15 PM

[11p-Z03-12] Investigation of Radical Radiation Intensity Distribution and Photoresist Removal Rate Distribution in Microwave Excited Water Vapor Plasma

〇Takeshi Aizawa¹, Sakurai Tasuku¹, Ishijima Tatsuo¹, Tanaka Yasunori¹, Yusuke Nakano¹ (1.Kanazawa Univ.)

Sessions

8 Plasma Electronics » 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[10a-Z03-1~8] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[10a-Z03-1] Generation of powder from liquid raw material using atmospheric pressure plasma

[10a-Z03-2] Mechanism of Surface Modification for Fluororesin by Vacuum Plasma

[10a-Z03-3] Deposition of tungsten nitride films by thermal CVD using liquid source material

[10a-Z03-4] Enhanced radical nitriding of graphene by gold nanoparticle plasmons

[10a-Z03-5] Nitriding of steel surface by dielectric barrier discharge atmospheric pressure plasma

[10a-Z03-6] Prediction of conductivity at Si/SiO₂ interface due to impurities originating from deposition precursors

[10a-Z03-7] Reduction of MWCNTs wall thickness by plasma treatment

[10a-Z03-8] Numerical Analysis of Input-Power Dependence of DLC Film Deposition Process by Low-Pressure and Radio Frequency Ar/CH₄ plasma-enhanced CVD

[11p-Z03-3~12] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[11p-Z03-3] Generation and annihilation of plasma-induced defects ~effects on c-Si surface passivation~

△ [11p-Z03-4] Electrical Analysis of Distributions of Defects in Si Substrates Introduced by Plasma Exposure Under Various Surface Conditions

△ [11p-Z03-5] Characterization of Plasma Process-Induced Defect States in SiO₂ Films Using Transient Current Analysis

△ [11p-Z03-6] Analysis of Hydrogen-induced Damage in SiN Atomic Layer Etching

▼ [11p-Z03-7] Surface fluorination of Y₂O₃ irradiated by low energy CF₃⁺ ion and F⁺ ion

△ [11p-Z03-8] Fluorine injection into III-V semiconductor compounds by diffusion and knock-on

[11p-Z03-9] Characteristics of transition metal thermal etching by β-diketon gases

△ [11p-Z03-10] Change in charge density at the bottom of capillary plate in a pulse modulated CCP

[11p-Z03-11] Plasma etching by using PTFE

[11p-Z03-12] Investigation of Radical Radiation Intensity Distribution and Photoresist Removal Rate Distribution in Microwave Excited Water Vapor Plasma

Authenticate

Sessions

8 Plasma Electronics » 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[10a-Z03-1~8] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[11p-Z03-3~12] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

△ [11p-Z03-4] Electrical Analysis of Distributions of Defects in Si Substrates Introduced by Plasma Exposure Under Various Surface Conditions

△ [11p-Z03-5] Characterization of Plasma Process-Induced Defect States in SiO2 Films Using Transient Current Analysis

△ [11p-Z03-6] Analysis of Hydrogen-induced Damage in SiN Atomic Layer Etching

▼ [11p-Z03-7] Surface fluorination of Y2O3 irradiated by low energy CF3+ ion and F+ ion

△ [11p-Z03-8] Fluorine injection into III-V semiconductor compounds by diffusion and knock-on

△ [11p-Z03-10] Change in charge density at the bottom of capillary plate in a pulse modulated CCP

Authenticate

△ [11p-Z03-5] Characterization of Plasma Process-Induced Defect States in SiO₂ Films Using Transient Current Analysis

▼ [11p-Z03-7] Surface fluorination of Y₂O₃ irradiated by low energy CF₃⁺ ion and F⁺ ion