[10a-Z03-1~8] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[10a-Z03-3] Deposition of tungsten nitride films by thermal CVD using liquid source material

〇Takayuki Kobayashi¹, Masayuki Nakamura¹, Toshiaki Tatsuta¹, Shin-ichi Motoyama¹ (1.Samco)

Keywords:tungsten nitride, thermal CVD, hexamethyldisilazane

Generally, tungsten nitride (W₂N) films are deposited by using PVD or thermal CVD with the use of WF₆, NH₃ and SiH₄. But there are step coverage issues when using PVD, and problems with safety and high cost with the use of NH₃ or SiH₄ when using thermal CVD. In this study, we tried to deposit W₂N films by thermal CVD using WF₆ and 1,1,1,3,3,3-hexamethyldisilazane, which is a non-explosive, inexpensive and liquid with Si-N bonds. X-Ray diffraction pattern showed W₂N (111) and (200) diffraction peaks. In addition, cross-section SEM image showed excellent step coverage of the deposited W₂N on trench pattern with an aspect ratio of 7.