[10a-Z10-1~10] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

[10a-Z10-5] Wafer rotation effect on silicon epitaxial growth for minimal CVD reactor

〇Mana Otani¹, Atsuhiro Motomiya¹, Toshinori Takahashi¹, Mitsuko Muroi¹, Hitoshi Habuka¹, Shin-ichi Ikeda^2,3, Yuuki Ishida^2,3, Shiro Hara^2,3 (1.Yokohama Nat. Univ., 2.MINIMAL, 3.AIST)

Keywords:epitaxial growth, silicon, dichlorosilane

A "minimal fab" that uses a small-diameter wafer (diameter 12.5 mm) has been proposed in order to produce the required amount of semiconductor devices while reducing the environmental load. It was reported in the previous report that for silicon epitaxial growth in a minimal fab, by switching the source gas from trichlorosilane to dichlorosilane, it became easier to understand the relationship between growth conditions and speed. Therefore, in this study, we investigated how the temperature around the substrate changes due to the wafer rotation.