[10a-Z24-1~12] 【CS.5】 6.1 強誘電体薄膜、13.3 絶縁膜技術、13.5 デバイス／配線／集積化技術のコードシェアセッション

▼ [10a-Z24-11] Reliability characteristics of Ferroelectric-HfO2 capacitor with IGZO capping for 3D structure non-volatile memory application

〇FEI MO¹、Takuya Saraya¹、Toshiro Hiramoto¹、Masaharu Kobayashi^1,2 (1.IIS, Univ. of Tokyo、2.D.lab,Univ. of Tokyo)

キーワード：IGZO, Ferroelectric, memory

In this paper, we fabricate and characterize the ferroelectric property of FE-HfO2 with IGZO cap. Then, we investigate the impact of the IGZO cap on the reliability of the fabricated capacitor regarding endurance and retention characteristics. Lastly, an asymmetric imprint effect on the capacitor is studied.