[10p-Z02-1~22] 15.4 III-V-group nitride crystals

[10p-Z02-2] Bulk GaN crystal growth by Low pressure acidic ammonothermal (LPAAT) method using 4 inch scale autoclave

〇kouhei kurimoto^1,2, quanxi bao^1,2, yutaka mikawa³, daisuke tomida², kouhei shima², kazunobu kojima², toru ishiguro², shigefusa chichibu² (1.Japan Steel Works, 2.IMRAM Tohoku Univ., 3.Mitsubishi Chemical Corp.)

Keywords:GaN, Ammonothermal method, Bulk crystal

The acid ammonothermal method is expected as one of mass production methods for large diameter bulk GaN crystals.We have reported that we succeeded in growth using a 4-inch size seed crystal by conducting a crystal growth experiment by introducing a GaN crystal growth autoclave with an inner diameter of 120 mm capable of manufacturing 4-inch diameter wafers.In this talk, we report on the latest achievements of crystal growth using the autoclave.