Potential Barrier in InGaN Single Quantum Well Structure on Moderate-Temperature-Grown GaN as Pit Formation Layer

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

Thu. Sep 10, 2020 1:00 PM - 7:15 PM Z02

Narihito Okada(Yamaguchi Univ.), Ryota Ishii(Kyoto Univ.), Hideaki Murotani(Tokuyama College)

6:30 PM - 6:45 PM

〇Satoshi Kurai¹, Junji Gao¹, Ryoga Makio¹, Naoya Hayashi¹, Shota Yuasa¹, Narihito Okada¹, Kazuyuki Tadatomo¹, Yoichi Yamada¹ (1.Yamaguchi Univ.)

Keywords:InGaN SQW, Potential Barrier, SNOM-PL