[10p-Z02-1~22] 15.4 III-V-group nitride crystals

△ [10p-Z02-6] Fabrication of p-type GaN film grown by halide vapor phase epitaxy utilizing MgO

〇(D)Kazuki Ohnishi¹, Yuki Amao¹, Naoki Fujimoto², Shugo Nitta², Yoshio Honda², Hiroshi Amano^2,3,4 (1.Dept. of Electronics, Nagoya Univ., 2.IMaSS, Nagoya Univ., 3.ARC, Nagoya Univ., 4.VBL, Nagoya Univ.)

Keywords:HVPE, p-type GaN

For growth of vertical GaN power devices such as a p-n junction diode by haide vapor phase epitaxy (HVPE), the fabrication of p-type GaN by HVPE is necessary. However, this fabrication method has not yet been established. In this study, we focus on MgO as a Mg doping source, and the HVPE growth of a Mg-doped GaN film was demonstrated. the Hall effect measurement showed p-type conduction. The activation energy was in good agreement with the one of Mg.