[Highlight]Operand observation of local piezoelectric lattice deformation in AlGaN/GaN HEMT devices by synchrotron radiation nanobeam X-ray diffraction

Akihiro Shimada; Haruna Shiomi; Tetsuya Tohei; Yusuke Hayashi; Shota Kaneki; Tamotsu Hasizume; Yasuhiko Imai; Kazushi Sumitani; Shigeru Kimura; Akira Sakai

Presentation information

Oral presentation

13 Semiconductors » 13.7 Compound and power electron devices and process technology

[10p-Z04-1~17] 13.7 Compound and power electron devices and process technology

Thu. Sep 10, 2020 1:00 PM - 5:30 PM Z04

Taketomo Sato(Hokkaido Univ.), Toshiharu Kubo(Nagoya Inst. of Tech.)

3:30 PM - 3:45 PM

△ [10p-Z04-10] [Highlight]Operand observation of local piezoelectric lattice deformation in AlGaN/GaN HEMT devices by synchrotron radiation nanobeam X-ray diffraction

〇Akihiro Shimada¹, Haruna Shiomi¹, Tetsuya Tohei¹, Yusuke Hayashi¹, Shota Kaneki², Tamotsu Hasizume², Yasuhiko Imai³, Kazushi Sumitani³, Shigeru Kimura³, Akira Sakai¹ (1.Grad. Sch. of Eng. Sci., Osaka Univ., 2.RCIQE, Hokkaido Univ., 3.JASRI)

Keywords:nanobeam X-ray diffraction, piezoelectric effect, nitride semiconductor