Optimization of Device Structure of Lateral GaN Fin FETs

Yusuke Hisatsune; Sangwoo Kim; Takuya Hoshii; Kuniyuki Kakushima; Hitoshi Wakabayashi; Kazuo Tsutsui

Presentation information

Oral presentation

13 Semiconductors » 13.7 Compound and power electron devices and process technology

[10p-Z04-1~17] 13.7 Compound and power electron devices and process technology

Thu. Sep 10, 2020 1:00 PM - 5:30 PM Z04

Taketomo Sato(Hokkaido Univ.), Toshiharu Kubo(Nagoya Inst. of Tech.)

1:15 PM - 1:30 PM

[10p-Z04-2] Optimization of Device Structure of Lateral GaN Fin FETs

〇(B)Yusuke Hisatsune¹, Sangwoo Kim¹, Takuya Hoshii¹, Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Kazuo Tsutsui¹ (1.Tokyo Tech)

Keywords:FinFET, On resistance, breakdown voltage

GaN FinFETs having three-dimensional channel are expected to exhibit performance higher than that of conventional AlGaN/GaN HEMTs. From the viewpoint of on-resistance (RonA) vs. breakdown voltage (V_BD), which is significant for power device applications, dependence and optimization of field plate structures, channel doping concentration, and length of drift region are discussed using device simulation.