The 81st JSAP Autumn Meeting, 2020

Presentation information

Oral presentation

13 Semiconductors » 13.7 Compound and power electron devices and process technology

[10p-Z04-1~17] 13.7 Compound and power electron devices and process technology

Thu. Sep 10, 2020 1:00 PM - 5:30 PM Z04

Taketomo Sato(Hokkaido Univ.), Toshiharu Kubo(Nagoya Inst. of Tech.)

1:15 PM - 1:30 PM

[10p-Z04-2] Optimization of Device Structure of Lateral GaN Fin FETs

〇(B)Yusuke Hisatsune1, Sangwoo Kim1, Takuya Hoshii1, Kuniyuki Kakushima1, Hitoshi Wakabayashi1, Kazuo Tsutsui1 (1.Tokyo Tech)

Keywords:FinFET, On resistance, breakdown voltage

GaN FinFETs having three-dimensional channel are expected to exhibit performance higher than that of conventional AlGaN/GaN HEMTs. From the viewpoint of on-resistance (RonA) vs. breakdown voltage (VBD), which is significant for power device applications, dependence and optimization of field plate structures, channel doping concentration, and length of drift region are discussed using device simulation.