[10p-Z04-1~17] 13.7 Compound and power electron devices and process technology

[10p-Z04-3] Fabrication of GaN FinFETs using selective area growth: Suppression of leakage

〇Ken Takayama¹, Takashi Ota¹, Mitsutaka Sasaki¹, Hayato Mukai¹, Takuya Hamada¹, Tokio Takahashi², Toshihide Ide², Mitsuaki Shimizu², Takuya Hoshii¹, Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Kazuo Tsutsui¹ (1.Tokyo Tech, 2.AIST)

Keywords:GaN, FinFET, power devise