The 81st JSAP Autumn Meeting, 2020

Presentation information

Print

Oral presentation

6 Thin Films and Surfaces » 6.4 Thin films and New materials

[10p-Z05-1~19] 6.4 Thin films and New materials

Thu. Sep 10, 2020 12:30 PM - 5:30 PM Z05

Katsuhisa Tanaka(Kyoto Univ.), Yoshinobu Nakamura(Univ. of Tokyo), Yuji Muraoka(Okayama Univ.)

1:15 PM - 1:30 PM

[10p-Z05-4] Fabrication and structural analysis of a-CNx:H thin films with high nitrogen content by microwave plasma CVD of the acetylene-nitrogen gas mixture

〇(M1)Yuga Sato1, Haruhiko Ito1 (1.Nagaoka Univ.)

Keywords:Plasma CVD, Amorphous carbon nitride

In this study Acetile, known for its high deposition rate when producing amorphous carbon by electrolysis Amorphous carbon nitride (a-CNX) thin film using microwave plasma CVD using carbon (C2H2) as a raw material. Was produced. At that time, the amount of nitrogen introduced as the carrier gas was kept constant and the amount of raw material introduced was changed. Then, a film was formed. The composition ratio, nitrogen content, and bonding state of each thin film formed were analyzed using XPS, FT-IR, and Raman scattering spectroscopy.